BC847QASX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA, 5V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-XFDFN Exposed Pad

Power - Max :

230mW

Product Status :

Active

Supplier Device Package :

DFN1010B-6

Transistor Type :

NPN, PNP Complementary

Vce Saturation (Max) @ Ib, Ic :

100mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

45V