Infineon Technologies AG has recently launched the CoolGaN™ G5 medium-voltage transistor, which is the world's first industrial gallium nitride (GaN) power transistor integrating a Schottky diode. This product series enhances the performance of the power system by reducing unnecessary dead zone losses, further improving the overall system efficiency. In addition, this integrated solution also simplifies the power stage design and reduces the material cost.

CoolGaN™ G5 transistor with integrated Schottky diode

In hard-switching applications, due to the relatively large effective bulk diode voltage (VSD) of GaN devices, GAN-based topologies may generate higher power losses. If the dead time of the controller is long, this situation will be more serious, resulting in the efficiency being lower than the target value. At present, power device design engineers usually need to parallel external Schottky diodes with GaN transistors or shorten the dead time through controllers. However, no matter which method is used, it requires additional energy, time and cost. Infineon's newly launched CoolGaN™ G5 transistor is a GaN transistor that integrates a Schottky diode, which can significantly alleviate such problems. It is applicable to application scenarios such as server and telecommunication intermediate bus converters (IBC), DC-DC converters, synchronous rectifiers of USB-C battery chargers, high-power power supplies (PSU), and motor drives.

Antoine Jalabert, vice president of Infineon Technologies' medium-voltage GaN product line, said: "With the increasingly widespread application of GaN technology in power design, Infineon realizes the need to continuously improve and enhance this technology in order to meet the changing needs of customers." The newly launched CoolGaN™ G5 transistor, which integrates Schottky diodes, demonstrates Infineon's commitment to accelerating customer-centric innovation and further promoting the development of wide bandgap semiconductor materials.

Due to the lack of body diodes, the reverse conduction voltage (VRC) of GaN transistors depends on the threshold voltage (VTH) and the gate bias bias (VGS) in the off state. In addition, the VTH of GaN transistors is usually higher than the conduction voltage of silicon diodes, which leads to a disadvantage during reverse conduction operation (also known as the third quadrant). Therefore, after adopting this new type of CoolGaN™ transistor, the reverse conduction loss is reduced, it can be compatible with more high-side gate drivers, and due to the relaxed dead time, the compatibility of the controller becomes broader, significantly simplifying the design.

The first GaN transistor integrating a Schottky diode is a 100V 1.5mΩ transistor in a 3x5mm PQFN package.

Supply situation

Engineering samples and target data sheets can be provided upon request.