Recently, in order to promote the development of the next-generation solid-state power distribution system, Infineon Technologies AG is expanding its silicon carbide (SiC) product portfolio and has launched a new CoolSiC™ JFET product series. The new series of products feature extremely low conduction loss, excellent turn-off capability and high reliability, making them an ideal choice for advanced solid-state protection and power distribution systems. With its powerful short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC™ JFET can achieve reliable and efficient system performance in various industrial and automotive applications. Including solid-state circuit breakers (SSCB), AI data center hot-swappable modules, electronic fuses, motor soft starters, industrial safety relays, and automotive battery disconnectors, etc.

CoolSiC™ JFET G1 in Q-DPAK packaging

Dr. Peter Wawer, President of Infineon Technologies' Zero Carbon Industrial Power Division, said: "The market requires smarter, faster and more reliable power distribution systems, and Infineon will meet this growing demand through CoolSiC™ JFET." This application-oriented power semiconductor technology is specifically designed to empower customers to address the complex challenges in this rapidly evolving field, providing them with the necessary key technical tools. We are proud to introduce products featuring industry-leading on-resistance (RDS(ON)), redefining the performance benchmark of silicon carbide (SiC) and further solidifying Infineon's leadership position in wide bandgap semiconductor technology.

The first-generation CoolSiC™ JFET features an ultra-low RDS(ON) with a minimum value of 1.5 mΩ (750 VBDss) /2.3 mΩ (1200 VBDss), significantly reducing conduction losses. The SiC JFET with optimized channels has a high degree of reliability under short-circuit and avalanche fault conditions. This product adopts the Q-DPAK top heat dissipation package, which is convenient for parallel connection and has an expandable current handling capacity. It can provide flexible layout and integration options for compact high-power systems. It has predictable switching capabilities under thermal stress, overload and fault conditions, and can maintain extremely high reliability for a long time during continuous operation.

To address heat dissipation and mechanical issues in harsh application environments, CoolSiC™ JFET adopts Infineon's advanced technology. The XT interconnection technology and diffusion soldering process have significantly reduced the transient thermal impedance of devices under common pulse and cyclic loads in industrial power systems, and greatly enhanced their reliability. This device is tested and verified based on the actual working conditions of solid-state power switches and adopts the Q-DPAK package that complies with industry standards. It can achieve rapid and seamless design integration in industrial and automotive applications.

Supply situation

Engineering samples of the new CoolSiC™ JFET series will be launched in 2025 and mass production will commence in 2026. Subsequently, various packages and modules will be added. This product series will be displayed at the Infineon booth at PCIM Europe 2025 in Nuremberg.

Infineon will participate in PCIM Europe 2025

PCIM Europe, the European Power Electronics Systems and Components Exhibition, will be held in Nuremberg, Germany from May 6th to 8th, 2025. Infineon will showcase low-carbon and digital products and solutions at booth 470 in Hall 7. Company representatives will also deliver several speeches on the PCIM Expo stage and at the concurrent PCIM conference.